Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film
نویسندگان
چکیده
Metal oxide semiconductor material has great potential to act as window layer in p–n heterojunction solar cell thin film owing low production cost and significant properties photovoltaic mechanism. In this work, n-TiO2/ZnO bilayer was effectively constructed by means of sol-gel spin coating technique an effort diminish the electron-hole recombination rate from single-layered film. Annealing time is one important parameters fabrication process varied study impact annealing treatment towards characteristics layer. It found that optimum parameter for 500 °C with 2 h. High crystallinity n-(101)-TiO2/(002)-ZnO obtained, which consists anatase a hexagonal wurtzite structure, respectively. Orientation (002)-ZnO essential deposition (111) Cu2O-absorbing due different lattice mismatch between these two interfaces. The homogenous morphology observed compact dense improvement transmittance also been achieved range 60%–80%, indicated incident light can penetrate throughout directly. addition, p-Cu2O absorbing successfully fabricated on top form p-n junction order visualize electrical rectification properties. existence confirmed (111)-peak orientation triangular shape structural morphological properties,
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ژورنال
عنوان ژورنال: Coatings
سال: 2023
ISSN: ['2079-6412']
DOI: https://doi.org/10.3390/coatings13010206